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APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 1-13 www.microsemi.com all ratings @ t j = 25c unless otherwise specified these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com top switches : trench + field stop igbt3 bottom switches : coolmos? all multiple inputs and outputs must be shorted together 7/24 ; 5/26 trench & field stop igbt3 q1, q3: v ces = 600v ; i c = 50a @ tc = 80c coolmos? q2, q4: v dss = 600v r dson = 45m ? max @ tj = 25c application ? solar converter features ? q2, q4 coolmos? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated ? q1, q3 trench & field stop igbt3 - low voltage drop - switching frequency up to 20 khz - rbsoa & scsoa rated - low tail current ? sic schottky diode (cr1, cr3) - zero reverse recovery - zero forward recovery - temperature independent switching behavior ? very low stray inductance ? kelvin source for easy drive ? internal thermistor for temperature monitoring ? high level of integration benefits ? optimized conduction & switching losses ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? easy paralleling due to positive t c of v cesat ? rohs compliant full bridge + rectifier bridge coolmos & trench + field stop igbt3 power module downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 2-13 www.microsemi.com 1. top switches 1.1 top trench + field stop igbt3 characteristics (per igbt) electrical characteristics symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a t j = 25c 1.5 1.9 v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 150c 1.7 v v ge(th) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 600 na dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 3150 c oes output capacitance 200 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 95 pf q g gate charge v ge =15v, i c =50a v ce =300v 0.5 c t d(on) turn-on delay time 110 t r rise time 45 t d(off) turn-off delay time 200 t f fall time inductive switching (25c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 40 ns t d(on) turn-on delay time 120 t r rise time 50 t d(off) turn-off delay time 250 t f fall time inductive switching (150c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? 60 ns t j = 25c 1.35 e off turn-off switching energy v ge = 15v v bus = 300v i c = 50a r g = 8.2 ? t j = 150c 1.75 mj i sc short circuit data v ge 15v ; v bus = 360v t p 6s ; t j = 150c 250 a r thjc junction to case thermal resistance 0.85 c/w downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 3-13 www.microsemi.com 1.2 top sic diode characteristics (cr1, cr3) (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 20 120 i rm maximum reverse leakage current v r =600v t j = 175c 40 600 a i f dc forward current tc = 100c 20 a t j = 25c 1.6 1.8 v f diode forward voltage i f = 20a t j = 175c 2 2.4 v q c total capacitive charge i f = 20a, v r = 300v di/dt = 800a/s 28 nc f = 1mhz, v r = 200v 130 c total capacitance f = 1mhz, v r = 400v 100 pf r thjc junction to case thermal resistance 1.5 c/w 2. bottom switches 2.1 bottom coolmos? characteristics (per coolmos?) absolute maximum ratings electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 600v t j = 25c 250 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 500 a r ds(on) drain C source on resistance v gs = 10v, i d = 24.5a 40 45 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 2.1 3 3.9 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 100 na symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 49 i d continuous drain current t c = 80c 38 i dm pulsed drain current 130 a v gs gate - source voltage 20 v r dson drain - source on resistance 45 m ? p d maximum power dissipation t c = 25c 250 w i ar avalanche current (repetitive and non repetitive) 15 a e ar repetitive avalanche energy 3 e as single pulse avalanche energy 1900 mj downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 4-13 www.microsemi.com dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 7.2 c oss output capacitance v gs = 0v ; v ds = 25v f = 1mhz 8.5 nf q g total gate charge 150 q gs gate C source charge 34 q gd gate C drain charge v gs = 10v v bus = 300v i d = 49a 51 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 100 t f fall time inductive switching (125c) v gs = 10v v bus = 400v i d = 49a r g = 5 ? 45 ns e on turn-on switching energy 405 e off turn-off switching energy inductive switching @ 25c v gs = 10v ; v bus = 400v i d = 49a ; r g = 5 ? 520 j e on turn-on switching energy 658 e off turn-off switching energy inductive switching @ 125c v gs = 10v ; v bus = 400v i d = 49a ; r g = 5 ? 635 j r thjc junction to case thermal resistance 0.5 c/w source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 49 i s continuous source current (body diode) tc = 80c 38 a v sd diode forward voltage v gs = 0v, i s = - 49a 1.2 v dv/dt peak diode recovery ? 4 v/ns t rr reverse recovery time t j = 25c 600 ns q rr reverse recovery charge i s = - 49a v r = 350v di s /dt = 100a/s t j = 25c 17 c ? dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s ? - 49a di/dt ? 100a/s v r ? v dss t j ? 150c 3. rectifier bridge (per diode) absolute maximum ratings symbol parameter max ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 600 v i f(av) maximum average forward current duty cycle = 50% t c = 80c 40 i fsm non-repetitive forward surge current 8.3ms t j = 45c 320 a electrical characteristics symbol characteristic test conditions min typ max unit i f = 30a 1.8 2.2 i f = 60a 2.2 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 250 i rm maximum reverse leakage current v r = 600v t j = 125c 500 a downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 5-13 www.microsemi.com dynamic characteristics symbol characteristic test conditions min typ max unit t rr reverse recovery time i f =1a,v r =30v di/dt = 100a/s t j = 25c 22 ns t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge t j = 125c 480 nc t j = 25c 3 i rrm reverse recovery current i f = 30a v r = 400v di/dt = 200a/s t j = 125c 6 a t rr reverse recovery time 85 ns q rr reverse recovery charge 920 c i rrm reverse recovery current i f = 30a v r = 400v di/dt = 1000a/s t j = 125c 20 a r thjc junction to case thermal resistance 1.2 c/w 4. thermal and package characteristics temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? ? t t b r r t 1 1 exp 25 85/25 25 package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 6-13 www.microsemi.com sp3 package outline (dimensions in mm) downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 7-13 www.microsemi.com 5. top switches curves 5.1 top trench + field stop igbt3 typical performance curves (per igbt) output characteristics (v ge =15v) t j =25c t j =25c t j =125c t j =150c 0 20 40 60 80 100 00.511.522.53 v ce (v) i c (a) output characteristics v ge =15v v ge =13v v ge =19v v ge =9v 0 20 40 60 80 100 0 0.5 1 1.5 2 2.5 3 3.5 v ce (v) i c (a) t j = 150c transfert characteristics t j =25c t j =25c t j =150c 0 20 40 60 80 100 56789101112 v ge (v) i c (a) energy losses vs collector current 0 0.5 1 1.5 2 2.5 3 3.5 0 2 04 06 08 01 0 0 i c (a) eoff (mj) v ce = 300v v ge = 15v r g = 8.2 ? t j = 150c 1 1.5 2 2.5 3 3.5 5 152535455565 gate resistance (ohms) eoff (mj) v ce = 300v v ge =15v i c = 50a t j = 150c switching energy losses vs gate resistance reverse bias safe operating area 0 25 50 75 100 125 0 100 200 300 400 500 600 700 v ce (v) i c (a) v ge =15v t j =150c r g =8.2 ? maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration in seconds thermal impedance (c/w) downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 8-13 www.microsemi.com 5.2 top sic diode characteristics (per diode) maximum effective transient thermal impedance, junction to case vs pulse duration d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 10 20 30 40 00.511.522.533.5 v f forward voltage (v) i f forward current (a) reverse characteristics t j =25c t j =75c t j =125c t j =175c 0 50 100 150 200 250 300 350 400 200 300 400 500 600 700 800 v r reverse voltage (v) i r reverse current (a) capacitance vs.reverse voltage 0 200 400 600 800 1 10 100 1000 v r reverse voltage c, capacitance (pf) downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 9-13 www.microsemi.com 6. bottom switches curves (per coolmos?) d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 40 80 120 160 200 240 280 320 360 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =25c t j =125c 0 20 40 60 80 100 120 140 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 1.15 1.2 1.25 1.3 0 20406080100120140 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 50a 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 10 - 13 www.microsemi.com 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 50a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1 02 03 04 05 0 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =50a t j =25c downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 11 - 13 www.microsemi.com t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 20 40 60 80 100 120 140 0 1020304050607080 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 10 20 30 40 50 60 70 0 1020304050607080 i d , drain current (a) t r and t f (ns) v ds =400v r g =5 ? t j =125c l=100h switching energy vs current e on e off 0 0.4 0.8 1.2 1.6 0 1020304050607080 i d , drain current (a) switching energy (mj) v ds =400v r g =5 ? t j =125c l=100h e on e off 0 0.5 1 1.5 2 0 1 02 03 04 05 0 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =50a t j =125c l=100h hard switching zcs zvs 0 50 100 150 200 250 300 5 101520253035404550 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =5 ? t j =125c t c =75c downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 12 - 13 www.microsemi.com 7. typical rectifier bridge performance curve (per diode) d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pu lse duration t j =25c t j =125c 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 v f , anode to cathode voltage (v) i f , forward current (a) forward current vs forward voltage i rrm vs. current rate of charge 15 a 30 a 60 a 0 5 10 15 20 25 0 200 400 600 800 1000 1200 -dif/dt (a/s) i rrm , reverse recovery current (a) t j =125c v r =400v trr vs. current rate of charge 15 a 30 a 60 a 50 75 100 125 150 175 0 200 400 600 800 1000 1200 -di f /dt (a/s) t rr , reverse recovery time (ns) t j =125c v r =400v q rr vs. current rate charge 15 a 30 a 60 a 0.0 0.5 1.0 1.5 0 200 400 600 800 1000 1200 -dif/dt (a/s) q rr , reverse recovery charge (c) t j =125c v r =400v capacitance vs. reverse voltage 0 25 50 75 100 125 150 175 200 1 10 100 1000 v r , reverse voltage (v) c, capacitance (pf) coolmos? comprise a new family of transi stors developed by infineon technologies ag. coolmos is a trademark of infineon technologies ag. downloaded from: http:///
APTCV60HM45RCT3G APTCV60HM45RCT3G C rev 1 october, 2012 13 - 13 www.microsemi.com disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication , inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dam ages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///

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